Manufacturer: |
VISHAY |
Product Category: |
IC Chips |
Series: |
TrenchFETR |
Packaging: |
Digi-ReelR Alternate Packaging |
Part-Aliases: |
SI7450DP-E3 |
Unit-Weight: |
0.017870 oz |
Mounting-Style: |
SMD/SMT |
Tradename: |
TrenchFET |
Package-Case: |
PowerPAKR SO-8 |
Technology: |
Si |
Operating-Temperature: |
-55°C ~ 150°C (TJ) |
Mounting-Type: |
Surface Mount |
Number-of-Channels: |
1 Channel |
Supplier-Device-Package: |
PowerPAKR SO-8 |
Configuration: |
Single |
FET-Type: |
MOSFET N-Channel, Metal Oxide |
Power-Max: |
1.9W |
Transistor-Type: |
1 N-Channel |
Drain-to-Source-Voltage-Vdss: |
200V |
Input-Capacitance-Ciss-Vds: |
- |
FET-Feature: |
Standard |
Current-Continuous-Drain-Id-25°C: |
3.2A (Ta) |
Rds-On-Max-Id-Vgs: |
80 mOhm @ 4A, 10V |
Vgs-th-Max-Id: |
4.5V @ 250μA |
Gate-Charge-Qg-Vgs: |
42nC @ 10V |
Pd-Power-Dissipation: |
5.2 W |
Maximum-Operating-Temperature: |
+ 150 C |
Minimum-Operating-Temperature: |
- 55 C |
Fall-Time: |
25 ns |
Rise-Time: |
20 ns |
Vgs-Gate-Source-Voltage: |
20 V |
Id-Continuous-Drain-Current: |
5.3 A |
Vds-Drain-Source-Breakdown-Voltage: |
200 V |
Rds-On-Drain-Source-Resistance: |
80 mOhms |
Transistor-Polarity: |
N-Channel |
Typical-Turn-Off-Delay-Time: |
32 ns |
Typical-Turn-On-Delay-Time: |
14 ns |
Forward-Transconductance-Min: |
19 S |
Channel-Mode: |
Enhancement |