| Manufacturer: | VISHAY |
| Product Category: | IC Chips |
| Series: | TrenchFETR |
| Packaging: | Digi-ReelR Alternate Packaging |
| Part-Aliases: | SI7450DP-E3 |
| Unit-Weight: | 0.017870 oz |
| Mounting-Style: | SMD/SMT |
| Tradename: | TrenchFET |
| Package-Case: | PowerPAKR SO-8 |
| Technology: | Si |
| Operating-Temperature: | -55°C ~ 150°C (TJ) |
| Mounting-Type: | Surface Mount |
| Number-of-Channels: | 1 Channel |
| Supplier-Device-Package: | PowerPAKR SO-8 |
| Configuration: | Single |
| FET-Type: | MOSFET N-Channel, Metal Oxide |
| Power-Max: | 1.9W |
| Transistor-Type: | 1 N-Channel |
| Drain-to-Source-Voltage-Vdss: | 200V |
| Input-Capacitance-Ciss-Vds: | - |
| FET-Feature: | Standard |
| Current-Continuous-Drain-Id-25°C: | 3.2A (Ta) |
| Rds-On-Max-Id-Vgs: | 80 mOhm @ 4A, 10V |
| Vgs-th-Max-Id: | 4.5V @ 250μA |
| Gate-Charge-Qg-Vgs: | 42nC @ 10V |
| Pd-Power-Dissipation: | 5.2 W |
| Maximum-Operating-Temperature: | + 150 C |
| Minimum-Operating-Temperature: | - 55 C |
| Fall-Time: | 25 ns |
| Rise-Time: | 20 ns |
| Vgs-Gate-Source-Voltage: | 20 V |
| Id-Continuous-Drain-Current: | 5.3 A |
| Vds-Drain-Source-Breakdown-Voltage: | 200 V |
| Rds-On-Drain-Source-Resistance: | 80 mOhms |
| Transistor-Polarity: | N-Channel |
| Typical-Turn-Off-Delay-Time: | 32 ns |
| Typical-Turn-On-Delay-Time: | 14 ns |
| Forward-Transconductance-Min: | 19 S |
| Channel-Mode: | Enhancement |
