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SI7178DP-T1-GE3 Datasheet
SI7178DP-T1-GE3(VISHAY) Specifications
Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7178DP-GE3
Unit-Weight: 0.017870 oz
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR SO-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR SO-8
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 104W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 100V
Input-Capacitance-Ciss-Vds: 2870pF @ 50V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 60A (Tc)
Rds-On-Max-Id-Vgs: 14 mOhm @ 10A, 10V
Vgs-th-Max-Id: 4.5V @ 250μA
Gate-Charge-Qg-Vgs: 72nC @ 10V
Pd-Power-Dissipation: 6.25 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 11 ns
Rise-Time: 10 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 14.9 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Rds-On-Drain-Source-Resistance: 14 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 27 ns
Typical-Turn-On-Delay-Time: 21 ns
Channel-Mode: Enhancement

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