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SI2328DS-T1-E3 Quick Quote & Ship


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SI2328DS-T1-E3 Datasheet
SI2328DS-T1-E3(VISHAY) Specifications
Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI2328DS-E3
Unit-Weight: 0.050717 oz
Mounting-Style: SMD/SMT
Package-Case: TO-236-3, SC-59, SOT-23-3
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: SOT-23-3 (TO-236)
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 730mW
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 100V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 1.15A (Ta)
Rds-On-Max-Id-Vgs: 250 mOhm @ 1.5A, 10V
Vgs-th-Max-Id: 4V @ 250μA
Gate-Charge-Qg-Vgs: 5nC @ 10V
Pd-Power-Dissipation: 730 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 11 ns
Rise-Time: 11 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 1.5 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Rds-On-Drain-Source-Resistance: 250 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 9 ns
Typical-Turn-On-Delay-Time: 7 ns
Channel-Mode: Enhancement

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