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TPS1101DR Quick Quote & Ship


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TPS1101DR Datasheet
TPS1101DR(Texas Instruments) Specifications
Manufacturer: TI
Product Category: FETs - Single
Series: TPS1101
Packaging: Reel
Unit-Weight: 0.002677 oz
Mounting-Style: SMD/SMT
Package-Case: SOIC-8
Technology: Si
Number-of-Channels: 1 Channel
Configuration: Single Quad Drain Triple Source
Transistor-Type: 1 P-Channel
Pd-Power-Dissipation: 791 mW
Maximum-Operating-Temperature: + 125 C
Minimum-Operating-Temperature: - 40 C
Fall-Time: 5.5 ns
Rise-Time: 5.5 ns
Vgs-Gate-Source-Voltage: - 15 V 2 V
Id-Continuous-Drain-Current: 2.3 A
Vds-Drain-Source-Breakdown-Voltage: 15 V
Rds-On-Drain-Source-Resistance: 90 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 19 ns
Typical-Turn-On-Delay-Time: 6.5 ns
Channel-Mode: Enhancement

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