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BD179G Quick Quote & Ship


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BD179G Datasheet
BD179G(ON Semiconductor) Specifications
Manufacturer: ON Semiconductor
Product Category: Transistors (BJT) - Single
Series: BD179
Packaging: Bulk
Mounting-Style: Through Hole
Package-Case: TO-225AA, TO-126-3
Mounting-Type: Through Hole
Supplier-Device-Package: TO-225AA
Configuration: Single
Power-Max: 30W
Transistor-Type: NPN
Current-Collector-Ic-Max: 3A
Voltage-Collector-Emitter-Breakdown-Max: 80V
DC-Current-Gain-hFE-Min-Ic-Vce: 63 @ 150mA, 2V
Vce-Saturation-Max-Ib-Ic: 800mV @ 100mA, 1A
Current-Collector-Cutoff-Max: 100μA (ICBO)
Frequency-Transition: 3MHz
Pd-Power-Dissipation: 30 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 65 C
Collector-Emitter-Voltage-VCEO-Max: 80 V
Transistor-Polarity: NPN
Collector-Emitter-Saturation-Voltage: 0.8 V
Collector-Base-Voltage-VCBO: 80 V
Emitter-Base-Voltage-VEBO: 5 V
Maximum-DC-Collector-Current: 3 A
Gain-Bandwidth-Product-fT: 3 MHz
Continuous-Collector-Current: 3 A
DC-Collector-Base-Gain-hfe-Min: 63

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